Experimental studies were made of Zn diffusion, using high temperatures, open tubes, and SiO2 protective layers. Precisely controlled diffusion depths of less than 0.2 or 0.4 could be obtained by using SiO2, doped with 0.1%Zn, as a diffusion source. Under these conditions, the diffusion coefficients were equal to 1.31 x 10-13 and 1.76 x 10-12cm2/s at temperatures of 700 and 1025C, respectively.

D.K.Gautam, Y.Shimogaki, Y.Nakano, K.Tada: Materials Science Forum, 1993, 117-118, 417-22