The electrical activity and lattice-site locations of Zn atoms which had been diffused into GaAs were studied by using various characterization techniques. Particle-induced X-ray emission channelling showed that all of the Zn atoms were substitutional and were electrically active acceptors. A difference between the behaviors of Zn in GaAs and InP could be understood in terms of the amphoteric native defect model. It was also shown that the Fermi level stabilization energy provided a convenient energy reference for the treatment of dopant diffusion at semiconductor hetero-interfaces.

W.Walukiewicz, K.M.Yu, L.Y.Chan, J.Jaklevic, E.E.Haller: Materials Science Forum, 1992, 83-87, 941-6