A model was developed which could explain the nature of Zn diffusion profiles in n+-type material. The model was based upon the effect of Coulomb pairing between interstitial and substitutional Zn. By extending the model so as to include the Coulomb pairing of interstitial Zn with all of the acceptors which were present during diffusion, the predictions were caused to be in good agreement with experimental data. Only one adjustable parameter was involved.

K.B.Kahen, J.P.Spence, G.Rajeswaran: Journal of Applied Physics, 1991, 70[4], 2464-6