Paper eintragenMisoriented samples which were tilted by 1 or 2º away from the (001) plane and towards [110] or (111), or towards [¯110] or (111), were prepared. The critical temperature at which a transition in growth mode occurred was studied by using reflection high-energy electron diffraction methods during the growth of AlAs on GaAs vicinal surfaces. The critical temperature of AlAs was higher than that of GaAs, thus indicating that the step-flow growth of AlAs occurred at a higher temperature. By combining these data with a theory that took account of 2-dimensional nucleation and surface diffusion, the surface diffusion length of Al was deduced. It was found to be greater than that of Ga for both types of substrate surface. By taking account of chemical equilibrium at the step edge of each surface, it was predicted that the surface diffusion length of Al should be anisotropic.

M.Tanaka, T.Suzuki, T.Nishinaga: Japanese Journal of Applied Physics, 1990, 29[5], L706-8