The dependence of Ga adatom surface diffusion upon the As flux during molecular beam epitaxial growth was investigated. Variations of the growth rate of GaAs layers, grown onto (001) surfaces adjacent to (111) surfaces, were measured by means of scanning microprobe reflection high-energy electron diffraction. The surface diffusion length was deduced from the variations in the growth rate. It was found that the surface diffusion length of the Ga adatoms became larger under a lower As flux.

M.Hata, A.Watanabe, T.Isu: Journal of Crystal Growth, 1991, 111[1-4], 83-7

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