Misoriented samples which were tilted by 1 or 2º away from the (001) plane and towards [110] or (111), or towards [¯110] or (111), were prepared. The critical temperature at which a transition in growth mode occurred was studied by using reflection high-energy electron diffraction methods during the growth of AlAs on GaAs vicinal surfaces. The critical temperature of AlAs was higher than that of GaAs, thus indicating that the step-flow growth of AlAs occurred at a higher temperature. The surface diffusion length of Ga was found to be shorter than that of Ga for both types of substrate surface.

M.Tanaka, T.Suzuki, T.Nishinaga: Japanese Journal of Applied Physics, 1990, 29[5], L706-8