Paper eintragenThe adsorption and migration characteristics of Ga atoms on (100) surfaces were investigated by using reflection high-energy electron diffraction and the alternate deposition of Ga and As4 onto the growing surface. Excess Ga deposition onto the surface produced Ga clusters or droplets on the first Ga layer. These dissolved very quickly after As4 deposition and formed flat GaAs layers when the number of Ga atoms was near to 2 or 3 times the surface site number. All of the results were attributed to the existence of differing migration velocities for various atoms.

Y.Horikoshi, H.Yamaguchi, M.Kawashima. Japanese Journal of Applied Physics, 1989, 28[8], 1307-11