Paper eintragenDiffusion and interdiffusion in GaAs was shown to be consistent with a charged point defect model. Charged Ga vacancies, VGa3-, and interstitials, IGa2+, appeared to control the diffusion of group-II, group-III and (probably) group-V elements. After adjusting for carrier concentration and As pressure, these elements were found to have an almost identical intrinsic diffusivity and activation energy over a wide range of temperatures. A natural consequence, of Ga diffusion via negative or positive point defects, was that enhanced group-III interdiffusion was expected under either n-type or p-type doping. Anomalous enhancements of group-II dopant diffusivity were related to the supersaturation of Ga interstitials.

R.M.Cohen: Journal of Applied Physics, 1990, 67[12], 7268-73