The interdiffusion between silicides (W, Ta, Mo, Ti) and GaAs, at temperatures of 825 to 975C, was studied by using Rutherford back-scattering spectrometry, particle-induced X-ray emission, and X-ray diffraction techniques. The specimens were furnace-annealed at 825 or 875C, or rapid thermally annealed at 975C. Almost no interdiffusion was observed in the cases of WSi2, TaSi2 and TiSi2 at 825C. It was not observed at all at 975C. In the case of MoSi2, there was marked atomic migration at temperatures as low as 825C. It was concluded that rapid thermal annealing was more beneficial from the point of view of interface stability.

J.Osvald, R.Sandrik: Thin Solid Films, 1989, 169[2], 223-8