Combined Raman and lattice dynamics studies of ultra-thin (GaAs)4(AlAs)4 superlattices showed that a marked degree of interdiffusion occurred in these samples when they were grown by using conventional molecular beam epitaxial temperatures of between 580 and 640C. At these temperatures, an interruption of growth had little effect upon the structural quality of the superlattices.

J.Grant, J.Menéndez, L.N.Pfeiffer, K.W.West, E.Molinari, S.Baroni: Applied Physics - Letters, 1991, 59[22], 2859-61