The occurrence of interdiffusion during annealing was characterized by Raman scattering studies of a GaAs/AlxGa1-xAs superlattice into which various degrees of damage had been introduced by the implantation of electrically inactive iso-electronic 31P+. This process eliminated impurity charge associated effects. Auger and secondary ion mass spectrometry methods were used to determine the amount of mixing beyond the damage zone in the superlattice. As a result, it was possible to distinguish between the contributions of impurities and implantation-induced defects to Ga/Al intermixing.

J.Sapriel, E.V.K.Rao, F.Brillouet, J.Chavignon, P.Ossart, Y.Gao, P.Krauz.: Superlattices and Microstructures, 1988, 4[1], 115-20