Paper eintragenThe shape of the confinement potential which resulted from interdiffusion of a GaAs quantum well, locally enhanced by defects due to Ga implantation, was computed. The simplest model which could take account of lateral diffusion of the defects was used. A variational calculation of the first 2 electronic levels within this two-dimensional potential supported the assignment of recently observed new cathodoluminescence lines to electrons which were laterally confined in a graded potential.

J.Cibert, P.M.Petroff: Physical Review B, 1987, 36[6], 3243-6