Implantation with Se+ ions, and the annealing of quantum-well samples, were studied by using transmission electron microscopy, photoluminescence spectroscopy and Monte Carlo simulation. It was concluded that enhanced layer interdiffusion occurred at depths which were several times greater than the projected range of the implanted Se. There were signs of residual stress at similar depths.

E.G.Bithell, W.M.Stobbs, C.Phillips, R.Eccleston, R.Gwilliam: Journal of Applied Physics, 1990, 67[3], 1279-87