A high-energy (up to 150keV) Ga+ focussed ion beam was used to implant quantum-well structures, and to interdiffuse heterojunctions so as to create quantum wires and boxes. Wires as wide as 80nm were found 200nm below the surface. Optical damage and interdiffusion processes were studied as a function of the implantation parameters and the (rapid) thermal annealing time. A universal correlation was found between the optical damage and the interdiffusion length.

F.Laruelle, P.Hu, R.Simes, R.Kubena, W.Robinson, J.Merz, P.M.Petroff: Journal of Vacuum Science and Technology B, 1989, 7[6], 2034-8