An analysis was made of the interdiffusion of a discrete GaAs layer, into an Al0.5In0.5P half-space, by using Si doping as an agent for enhanced layer interdiffusion. Enhanced interdiffusion was observed on both column-III and column-V sites; but the column-III interdiffusion coefficient exceeded the column-V interdiffusion coefficient by 2 orders of magnitude. Due to this disparity between the diffusion coefficients, large defect-producing strains were introduced by the interdiffusion. It was shown that, by modelling the resultant strain profiles and by applying a critical thickness analysis, the instability of such interdiffused structures could be understood.

R.L.Thornton, F.A.Ponce, G.B.Anderson, F.J.Endicott: Applied Physics Letters, 1993, 62[17], 2060-2