Electrically inactive iso-electronic 31P+ and 27Al+ were implanted into molecular beam epitaxially grown GaAs/Ga0.7Al0.3As superlattices at 25 or 250C. Evidence was found for implantation damage and for Al/Ga interdiffusion which depended upon the annealing time.

E.V.K.Rao, F.Brillouet, P.Ossart, Y.Gao, J.Sapriel, P.Krauz: Journal de Physique - Colloque C5, 1987, 48[11], 113-6