By carrying out various annealing treatments on Sn-doped molecular beam epitaxially grown GaAs-Ga0.72Al0.28As quantum well structures it was shown that Sn, like other donor atoms (Si, S), induced disordering by enhancing interdiffusion. Also, the voluntary introduction of B atoms into a Sn-doped structure before annealing led to a retardation of Sn-enhanced interdiffusion.

E.V.K.Rao, P.Ossart, F.Alexandre, H.Thibierge: Applied Physics Letters, 1987, 50[10], 588-91