Interfacial reactions, in both thin-film and bulk samples, were studied at temperatures of between 400 and 1000C. The diffusion path for Ir/GaAs was found to be: Ir/lrGa/IrAs2/GaAs. In the thin-film case, where the Ir supply was limited, the final configuration was: Ga5Ir3/IrAs2/GaAs. The activation energies for diffusion in the thin-film and bulk cases were 3.15 and 2.96eV, respectively.

K.J.Schulz, O.A.Musbah, Y.A.Chang: Journal of Applied Physics, 1990, 67[11], 6798-806