Deep level transient spectroscopy and optically-excited deep-level transient spectroscopy were used to investigate the defect distribution in type-IIb synthetic specimens. Two defects were detected, at 0.83 and 1.25eV above the valence band edge. Capacitance-voltage measurements revealed a B doping density of 7 x 1015/cm3 and a trap density, at 0.83eV, of some 1015/cm3.

Deep Level Transient Spectroscopy of Synthetic Type IIb Diamond. R.Zeisel, C.E.Nebel, M.Stutzmann: Journal of Applied Physics, 1998, 84[11], 6105-8