The behavior of implanted Be+ ions was investigated during rapid thermal annealing at temperatures of between 600 and 900C. It was found that the apparent activation energy for Be was equal to 0.38eV. Higher activation efficiencies were found for the dopant in InGaAs, as compared with InAlAs. Anomalously low activation was detected for low-dose Be implants. The latter effect was attributed to a lack of vacant sites for the Be atoms to occupy. Extensive redistribution of the Be was observed after annealing (750C, 10s).

E.Hailemariam, S.J.Pearton, W.S.Hobson, H.S.Luftman, A.P.Perley: Journal of Applied Physics, 1992, 71[1], 215-20