The diffusion of Be from buried Be-doped layers was studied at temperatures of between 600 and 700C. Four types of Be diffusion profile were identified. An interstitial cum substitutional model was proposed to be the diffusion mechanism, which depended upon the growth conditions. The values of the effective Be diffusion coefficient, for dopant levels which were above and below about 5 x 1016/cm3, were found to be 1.9 x 10-15 and 9 x 10-16cm2/s, respectively.

E.G.Scott, D.Wake, G.D.T.Spiller, G.J.Davies: Journal of Applied Physics, 1989, 66[11], 5344-8