Results on diffusion across InGaAs/InP and InP/InGaAs hetero-interfaces were described. Diffusion from an InP top layer, Cd diffusion, or simple annealing of the samples, had no measurable effect upon the stability of the interfaces. The marked interdiffusion of In and Ga host atoms, as well as Zn gettering at the interface, were analyzed in terms of kick-out and vacancy mechanisms.

P.Ambrée, A.Hangleiter, M.H.Pilkuhn, K.Wandel: Applied Physics Letters, 1990, 56[10], 931-3