The interdiffusion of In and Ga at an InGaAs/GaAs interface was studied. The interdiffusion coefficients and activation energies were determined by correlating shifts in photoluminescence peaks with calculated quantum well transition energies that were based upon an erf concentration profile. The results indicated that a higher x-value, in InxGa1-xAs single quantum wells, led to a higher interdiffusion coefficient for Ga under As over-pressure annealing conditions. Moreover, an increase in the As over-pressure increased the tendency to interdiffusion, whereas a Ga over-pressure reduced interdiffusion. The thermal activation energies for x-values of 0.057, 0.1 or 0.15 ranged from 3.3 to 2.6eV under an As over-pressure, and from 3 to 2.23eV under a Ga over-pressure.

K.Y.Hsieh, Y.L.Hwang, J.H.Lee, R.M.Kolbas: Journal of Electronic Materials, 1990, 19[12], 1417-23