Results on diffusion across InGaAs/InP and InP/InGaAs hetero-interfaces were described. Marked interdiffusion of In and Ga host atoms, as well as Zn gettering at the interface, were analyzed in terms of kick-out and vacancy mechanisms. The activation energy for Zn-stimulated Ga interdiffusion across the InGaAs/InP heterojunction was estimated to be 3.8eV.

P.Ambrée, A.Hangleiter, M.H.Pilkuhn, K.Wandel: Applied Physics Letters, 1990, 56[10], 931-3