The distribution of group-III metals at In0.53Ga0.47As/In0.52Al0.48As interfaces, before and after annealing at 1085K, were measured. Little evidence for Al interdiffusion was found, but the Ga concentration profiles exhibited some broadening after annealing. The almost constant original In profiles developed strong modulations; with near-discontinuities at the initial interfaces. This behavior was explained in terms of In diffusion in the chemical potential gradient which was established by the disparity in Al and Ga mobilities and by the requirement for III-V stoichiometry in the alloys.

R.J.Baird, T.J.Potter, G.P.Kothiyal, P.K.Bhattacharya: Applied Physics Letters, 1988, 52[24], 2055-7