It was found that Si-induced mixing produced comparable anion and cation interdiffusion. This was consistent with a di-vacancy mechanism. The mixing depended markedly upon the Si content and occurred above the diffusion shoulder, where the vacancy and defect pair concentrations were greatly enhanced. The absence of strain-related growth defects in the un-strained starting material permitted the formation of a high-quality strained-layer superlattice by mixing.

S.A.Schwarz, P.Mei, T.Venkatesan, R.Bhat, D.M.Hwang, C.L.Schwartz, M.Koza, L.Nazar, B.J.Skromme: Applied Physics Letters, 1988, 53[12], 1051-3