Samples of n-type In0.53Ga0.47As were implanted with Co and Fe, and p-type samples of the same material were implanted with Ti. In the case of high-temperature single-energy Co and Fe implantation, no satellite peaks were observed at locations such as 0.8R, R + dR, or 2R, where R was the projected range and dR was the straggle of the implant. During high-temperature annealing, out-diffusion of the implant was as severe as that for room-temperature implants. In-diffusion of the implant also occurred, but it was not as severe as the out-diffusion. High-temperature annealing of Ti-implanted material resulted in slight Ti in-diffusion, with minimal redistribution or out-diffusion. In the case of high-temperature implants, the lattice quality of the annealed material was close to that of virgin material. Regardless of the ion type, resistivities that were close to the intrinsic limit were measured in implanted and annealed materials.

M.V.Rao, S.M.Gulwadi, S.Mulpuri, D.S.Simons, P.H.Chi, C.Caneau, W.P.Hong, O.W.Holland, H.B.Dietrich: Journal of Electronic Materials, 1992, 21[9], 923-8