The diffusion of Zn into In0.57Ga0.43As was studied by using boat diffusion, diffusion from As- or P-doped spun-on films, or diffusion from In-doped spun-on films. The depth profiles were deduced from junction positions. It was found that the p+/p- junction position depended upon the diffusion method which was used, but not upon the sample growth technique. The p-/n junction position depended upon both factors. Because the amounts of As, Ga and In (or of the respective vacancies) differed, it was possible to identify diffusion mechanisms. It was proposed that interstitially diffusing Zn was independently trapped by 2 immobile vacancy centers. These consisted of Zn on VIn or VGa in the p+ region, and Zn on VAsZnVAs in the p- region.

U.König, H.Haspeklo, P.Marschall, M.Kuisl: Journal of Applied Physics, 1989, 65[2], 548-52