Paper eintragenSecondary ion mass spectrometry and electrochemical profiling studies were made of the saturation of Zn doping and diffusion in In0.53Ga0.47As which had been grown onto InP by using organometallic vapor-phase epitaxy. It was found that the results were consistent with a so-called kick-out mechanism. It was proposed that the diffusing species was probably a neutral Zn interstitial. Accumulation of Zn at the interface with a highly n-doped layer indicated the possible formation of Zn-donor complexes.

S.J.Taylor, B.Beaumont, J.C.Guillaume: Semiconductor Science and Technology, 1993, 8[5], 643-6