A systematic study of Zn incorporation showed that the surface Zn concentration in metalorganic vapor phase epitaxial material could be increased from a grown-in maximum of 2 x 1019, to 1020/cm3, by diffusion from a spun-on glass source. These values were found to depend upon the type of p-dopant element which was used in as-grown double heterostructures.

D.L.Murrell: Semiconductor Science and Technology, 1990, 5[5], 414-20