The diffusion of Zn from spun-on films, and into InP/InGaAs/InP heterostructures, was studied. Marked segregation occurred at the InGaAs/InP heterojunctions and increased the Zn concentration in InGaAs by about an order of magnitude. Diffusion and segregation parameters were deduced from the Zn concentration profiles.

F.Dildey, M.C.Amann, R.Treichler: Japanese Journal of Applied Physics, 1990, 29[5], 810-2