Results on diffusion across InGaAs/InP and InP/InGaAs hetero-interfaces were described. It was found that marked changes in the group-III sub-lattice occurred, near to the interface, when Zn diffused across the heterojunction from an InGaAs top layer. The gettering of Zn at the interface was analyzed in terms of kick-out and vacancy mechanisms. The activation energy for Zn-stimulated Ga interdiffusion across the InGaAs/InP heterojunction was estimated to be 3.8eV.

P.Ambrée, A.Hangleiter, M.H.Pilkuhn, K.Wandel: Applied Physics Letters, 1990, 56[10], 931-3