It was recalled that H played a significant role in the growth of diamond, and was thought to affect its electrical properties. However, in spite of some progress which had been made in studying H in diamond, the configuration chemistry and behaviour were not yet well-established. The present work was aimed at clarifying some of the remaining problems. Micro-scanning heavy-ion elastic-recoil detection analyses were made of H in a type-IIa diamond. The latter was subjected to various treatments, including the plasma loading of H, and the creation of vacancies by ion implantation and annealing. The results revealed no evidence for the presence of H in the bulk diamond, due to plasma loading; even after the creation of vacancies, followed by the plasma-loading of H.

Diffusion Characteristics of Hydrogen in Diamond. I.Z.Machi, J.E.Butler, S.H.Connell, B.P.Doyle, R.D.Maclear, J.P.F.Sellschop, E.Sideras-Haddad, D.B.Rebuli: Diamond and Related Materials, 1999, 8[8-9], 1611-4