Paper eintragenThe Zn was introduced, using spun-on films, into n-InP/p+-InGaAs/n-InP heterostructures which had been grown via metalorganic vapor phase epitaxy (with Mg as a p-dopant). After diffusion, the Mg was completely replaced by Zn and was enriched in the spun-on film. In the presence of Mg, the in-diffusion of Zn was strongly enhanced. By varying the dopant level and diffusion conditions, the underlying mechanism was compared with that which operated in Be-doped AlGaAs/GaAs heterostructures.

F.Dildey, R.Treichler, M.C.Amann, M.Schier, G.Ebbinghaus: Applied Physics Letters, 1989, 55[9], 876-8