limited growth of InGaAs in temperature gradient In-Ga-As ternary solutions. The A theoretical model was proposed for the calculation of the layer thickness of a III-V ternary crystal which was grown by using the source-current controlled method. The latter could be used to control the supply of depleted solute elements to a solution during growth. That is, solute elements were continuously supplied to the growth solution from a source material and were transported to a substrate (through the temperature gradient in the growth solution) via diffusion and electromigration. By using the theoretical model, analytical calculations could be made of the diffusion-limited and electromigration-calculations indicated that the thickness depended upon growth parameters such as the growth temperature, the cooling rates of the substrate and source, the solution length, the temperature difference between substrate and source, the mobility of the migrating solute element, and the electric field in the solution.

K.Nakajima: Journal of Crystal Growth, 1989, 98[3], 329-40