Investigations were made of the interdiffusion behavior and thermal stability of n-doped and undoped multiple quantum-well structures that were lattice-matched to InP by means of molecular beam epitaxy. The activation energy for the main interdiffusion process was deduced to be 2.5eV for doped structures and 2.9eV for undoped structures. The differing interdiffusion processes were monitored by using photoluminescence spectroscopy at 8K, after rapid thermal annealing. The effect of doping was studied by comparing the results for n-doped and undoped structures. Photoluminescence excitation spectroscopic data for 2K confirmed the differing interdiffusion processes.

V.Hofsäss, J.Kuhn, H.Schweizer, H.Hillmer, R.Lösch, W.Schlapp: Journal of Applied Physics, 1995, 78[5], 3534-6