Low-pressure metalorganic vapor phase epitaxially grown strained quantum well structures were characterized by using photoluminescence and X-ray diffraction techniques. It was shown that, beyond the pseudomorphic limit, these structures exhibited considerable Ga/In interdiffusion at the interfaces, and partial strain relaxation in the quantum well layers.

A.K.Srivastava, B.M.Arora, S.Banerjee: Journal of Electronic Materials, 1994, 23[2], 191-4