Interdiffusion in quantum wells was studied by using photoluminescence methods to monitor the temporal development of the diffusion process in a single sample (table 42). Two distinct regimes were detected: a fast initial diffusion and a second, steady-state, diffusion. The steady-state diffusion was found to depend upon the depth of the quantum well from the surface, and could be correlated with published data on the diffusion of Ga vacancies into GaAs.

W.P.Gillin, D.J.Dunstan, K.P.Homewood, L.K.Howard, B.J.Sealy: Journal of Applied Physics, 1993, 73[8], 3782-6

Table 42

Interdiffusion in InGaAs/GaAs