The interdiffusion of single quantum wells was studied as a function of temperature for both p-type (Be) and n-type (Si) doping. The interdiffusion of group-III elements was monitored via photoluminescence from the ground states of valence and conduction band quantum wells. Intermixing was modelled by using a Green's function method to solve the diffusion equation that described the evolution of well shapes during processing. It was deduced that the activation energy for interdiffusion was 3.4eV.

W.P.Gillin, K.P.Homewood, L.K.Howard, M.T.Emeny: Superlattices and Microstructures, 1991, 9[1], 39-42