Paper eintragenAn investigation was made of the effect of interdiffusion upon the photoluminescence and Raman spectra of a single quantum well of InGaAs (8nm wide) which was sandwiched between 2 large InGaAsP barriers. Firstly, an investigation was made of a blue shift of the recombination line (2K) which occurred after annealing at 650 or 750C for times which ranged from 0.25 to 2h. A single diffusivity coefficient was assumed for all of the atomic species, and the amount of intermixing was deduced by means of model calculations. Average diffusivity coefficients of 0.0095 and 0.2Ų/s were found at 650 and 750C, respectively. This agreed well with published data on InGaAs/InP, and suggested that the activation energy was 2.54eV.

H.Peyre, F.Alsina, J.Camassel, J.Pascual, R.W.Glew: Journal of Applied Physics, 1993, 73[8], 3760-8