Thermal interdiffusion on the group-V sub-lattice in quantum-well structures was studied by using samples which were annealed under silicon nitride encapsulation, or under various phosphine over-pressures. It was found that the interdiffusion length was comparable, under all of these conditions, with only small effects of the phosphine over-pressure being observed. It was suggested that interdiffusion results which were obtained for nitride-capped samples could be applied to the interdiffusion which occurred during growth.

W.P.Gillin, S.D.Perrin, K.P.Homewood: Journal of Applied Physics, 1995, 77[4], 1463-5