A formula was derived which described the interdiffusion profiles of quantum wells. It was shown that it accurately modelled interdiffusion in quantum wells of lattice-matched InGaAs. The formula took account of the differing interdiffusion coefficients between layers, and of the interfacial discontinuity of interdiffused species. The formula explained how quantum energy shifts due to interdiffusion varied with annealing time and annealing temperature in various wide-well layers of both InGaAsP/InP and GaAs/AlGaAs quantum wells. The quantitative difference between the interdiffusion profiles in these two materials was also demonstrated.

K.Mukai, M.Sugawara, S.Yamazaki: Physical Review B, 1994, 50[4], 2273-82