The effects of differing cation and anion interdiffusion rates upon the disordering of In0.53Ga0.47As/InP single quantum-wells were investigated by using an erf distribution to model the concentration profile after interdiffusion. The early stages of disordering caused a spatially dependent strain build-up, which could be compressive or tensile. This strain profile, and the concentration distribution, gave rise to interesting carrier confinement profiles after disordering. A significantly higher cation interdiffusion rate produced a red-shift of the ground-state transition energy which, with prolonged interdiffusion, saturated and then decreased. A significantly higher anion interdiffusion rate caused a blue-shift in the ground-state transition energy, and shifted the light-hole ground-state to above the heavy-hole ground-state.

W.C.Shiu, J.Micallef, I.Ng, E.H.Li: Japanese Journal of Applied Physics, 1995, 34[1-4A], 1778-83