The thermal stability and interdiffusion of In0.53Ga0.47As/InP surface quantum wells was investigated. Well-defined high-intensity photoluminescence emission spectra were obtained. After rapid thermal annealing (500 to 900C, 60s), strong emission energy shifts of up to 0.316eV were detected. By assuming a simple model for ion intermixing, the interdiffusion coefficient was estimated to be equal to 1.7 x 10-14cm2/s at 900C; with an activation energy of 1.3eV.

J.Oshinowo, A.Forchel, D.Grützmacher, M.Stollenwerk, M.Heuken, K.Heime: Applied Physics Letters, 1992, 60[21], 2660-2