The effect of diffusion upon quantum-well structures was studied by using secondary ion mass spectrometry, Auger electron spectroscopy, capacitance-voltage measurements, photoluminescence, and X-ray diffraction methods. It was found that there was marked interdiffusion of In. In a multiple quantum well, Zn diffusion at 500C caused In intermixing and the Auger electron spectroscopic profiles became flat.

G.J.Van Gurp, W.M.Van de Wijgert, G.M.Fontijn, P.J.A.Thijs: Journal of Applied Physics, 1990, 67[6], 2919-26