It was shown that Zn diffusion into a GaxIn1-xAsyP1-y-InP quantum well structure and superlattice, with a thickness of 10nm, completely disordered the quantum well and the superlattice layers. It was found that the photoluminescence wavelength of the quantum well and the superlattice had increased after Zn diffusion. This was attributed to In-Ga interdiffusion at the interface, due to an interchange process between interstitials and substitutional Zn atoms.

M.Razeghi, O.Acher, F.Launay: Semiconductor Science and Technology, 1987, 2[12], 793-6