The effect of Zn diffusion upon quantum-well structures was studied by using secondary ion mass spectrometry, Auger electron spectroscopy, capacitance-voltage measurements, photoluminescence, and X-ray diffraction methods. The structures were stable to annealing, in the absence of Zn. In a multiple quantum well, Zn diffusion at 500C caused In and Ga intermixing and the Auger electron spectroscopic profiles became flat. Photoluminescence data revealed that interdiffusion began at temperatures above 420C. The diffusion of Zn changed the lattice parameter values of InGaAsP and InP so that the average value decreased.

G.J.Van Gurp, W.M.Van de Wijgert, G.M.Fontijn, P.J.A.Thijs: Journal of Applied Physics, 1990, 67[6], 2919-26