Metalorganic vapor phase epitaxial growth of cubic GaN on patterned GaAs(100) substrates which had (111)A or (111)B facets was studied. It was found that the growth features depended strongly upon the configuration of the pattern. It was deduced that these features arose from an orientation-dependent growth rate, which varied in the order: (111)B > (100) > (111)A, together with Ga adatom diffusion on the surface. By taking advantage of the growth on patterned substrates, the diffusion length of Ga adatoms on the GaAs(100) surface was estimated to be typically equal to several microns.

M.Nagahara, S.Miyoshi, H.Yaguchi, K.Onabe, Y.Shiraki, R.Ito: Journal of Crystal Growth, 1994, 145[1-4], 197-202