A theoretical study was made of the defect characteristics of a strained-layer superlattice. On the basis of the calculated charge states, some closely-bound interstitial-antisite pairs were found to form at a distance of one bond length in a stable GaP/InP (1 x 1) structure. The defect-related states that were localized in the energy gap suggested that the formation mechanism of the EL2 complex in the GaAs system was inapplicable to GaP/InP multilayer structures. A slow self-diffusion process was proposed for both group-III and group-V atoms in this superlattice. Kick-out reactions were suggested to be favored at higher dopant concentrations.

E.G.Wang: Physica Status Solidi B, 1992, 174[2], 367-74