The diffusion of Te into undoped p-type material was carried out, and the samples were studied using cathodoluminescence and photoluminescence techniques. The luminescence centers in Te-diffused samples were identified and were compared with those in Te-doped bulk material. Essential differences in the radiative levels, between diffused and as-grown doped samples, were observed. Evidence of the presence of self-compensating acceptor complexes was found in the case of diffused samples. At short and medium diffusion times, a compensating acceptor complex, VGaGaSbTeSb, was observed. At long diffusion times, the predominant acceptor center was suggested to be the antisite defect, GaSb, or a related complex.

P.S.Dutta, B.Méndez, J.Piqueras, E.Dieguez, H.L.Bhat: Journal of Applied Physics, 1996, 80[2], 1112-5